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IBS and other joint research achievements
Heterogeneous material zero-defect
Applies to gas barrier, sensor, etc.
The domestic research team resolved heterogeneous synthetic difficulties.
Dr Kim Soo-min of the Korean Institute of Science and Technology (KIST) and Professor Kim Ki-gang of Dongguk University have developed a two-dimensional material called "boron nitrid" consisting of two elements, nitrogen and boron, as well as synthesizing them. The results of the research were published on the 16th in the international journal "Nauka".
Boron-nitride (hBN) is a hexagonal atomic structure such as graphene and has a structure similar to plates in which boron and nitrogen are replaced by carbon.
Two-dimensional materials have excellent electrical properties, flexibility and transparency and are considered key materials for the next generation of electronic devices. In addition, it is very likely to be used as a protective barrier of the device because it does not transmit gas. Among them, boron nitride is the only insulating material among two-dimensional materials and thus attracted attention as an insulating layer of a transparent flexible electronic device.
However, in order to maintain the characteristics of boron nitride, a difficult problem remains to be synthesized in a single crystalline form. A large region of nitrid boron, which is developed by the existing synthesis method, is synthesized in polycrystalline form, so atomic and boron atomic connections are incomplete and insulation characteristics are poor.
The researchers synthesize thin films of monocrystalline boron nitrids using a "self-regulatory" phenomenon in which nitrina beads are formed in the same direction on the surface of liquid gold. This method can synthesize a unique crystal shape of the desired size regardless of the size of the thin film.
The crude material of boron nitride was easily adsorbed and moved to a smooth surface of gold in the form of liquid for the synthesis of circular grains of nitride boron of uniform size. Each grain of boron nitride is randomly moved, and the electric mutual attraction force is induced between nitrogen and boron at the edge of the crystalline grains, and as a result, the crystalline grains are aligned and aligned.
In addition, other two-dimensional materials, such as graphene, semiconductor materials such as molybdenum disulfide and tungsten disulfide are also synthesized using monocrystalline materials using monocrystalline thin boron nitride as a substrate. Moreover, a hetero-laminated structure is synthesized in which the graphene and boron nitride layers are coated.
This research has developed the original technology for the synthesis of two-dimensional material consisting of heterogeneous elements in a large crystal of a large area, and is expected to revolutionize the development of transparent, transparent, electronic devices of the new generation, gas barriers, sensors and filters.
Gangjeong reporter [email protected]
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